* OPA660X1 = MDB + MDT + MBC OPERATIONAL TRANSCONDUCTANCE AMPLIFIER * AND BUFFER SIMPLIFIED CIRCUIT MODEL * * CREATED 8/92 KL * REV.B 7/9/93 BCB : CLARIFCATION OF NODE SET INSTRUCTIONS * * ------------------------------------------------------------------------ * | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE; | * | HOWEVER; BURR-BROWN ASSUMES NO RESPONSIBILITY FOR INACCURACIES OR | * | OMISSIONS. BURR-BROWN ASSUMES NO RESPONSIBILITY FOR THE USE OF THIS | * | INFORMATION, AND ALL USE OF SUCH INFORMATION SHALL BE ENTIRELY AT | * | THE USER'S OWN RISK. NO PATENT RIGHTS OR LICENSES TO ANY OF THE | * | CIRCUITS DESCRIBED HEREIN ARE IMPLIED OR GRANTED TO ANY THIRD PARTY. | * | BURR-BROWN DOES NOT AUTHORIZE OR WARRANT ANY BURR-BROWN PRODUCT FOR | * | USE IN LIFE-SUPPORT DEVICES AND/OR SYSTEMS. | * ------------------------------------------------------------------------ * |-------------------------------------------------------------| * | This macro model is being supplied as an aid to | * | circuit designs. While it reflects reasonably close | * | similarity to the actual device in terms of performance, | * | it is not suggested as a replacement for breadboarding. | * | Simulation should be used as a forerunner or a supplement | * | to traditional lab testing. | * |-------------------------------------------------------------| * * NOTE : FOR QUICKER CONVERSION USE THE NODESET V(Xyour.13)=+4.2758 AND * V(Xyour.14)=-4.2774 IN THE ROOT SIMULATION FILE. ("Xyour" IS * THE DEVICE NAME USED IN THE ROOT FILE.) * * * CONNECTIONS: IQ ADJUST * | E (EMITTER) * | | B (BASE) * | | | NEGATIVE SUPPLY * | | | | BUFFER IN * | | | | | BUFFER OUT * | | | | | | POSITIVE SUPPLY * | | | | | | | C (COLLECTOR) * | | | | | | | | .SUBCKT OPA660X1 1 2 3 4 5 6 7 8 * X1 4 5 6 7 13 14 MDB ; Diamond Buffer DB X2 2 3 4 7 8 13 14 MDT ; Diamond Transistor DT X3 1 4 7 13 14 MBC ; Biasing Circuit BC * C201 1 0 2.0E-12 C202 2 0 3.3E-12 C206 6 0 2.0E-12 C208 8 0 4.2E-12 * .ENDS OPA660X1 *Diamond Buffer MDB * .SUBCKT MDB 4 5 6 7 13 14 C71 71 0 0.06E-12 C72 72 0 0.06E-12 C73 73 0 2.00E-12 ** R73 73 5 90 ** Q71 71 13 7 PI 2 Q72 72 14 4 NI 2 Q73 4 73 71 PI Q74 7 73 72 NI Q75 7 71 6 NI 7 Q76 4 72 6 PI 7 * .ENDS MDB *Diamond Transistor MDT * .SUBCKT MDT 2 3 4 7 8 13 14 ** R23 23 3 90 ** C21 21 0 0.06E-12 C22 22 0 0.06E-12 C23 23 0 2.00E-12 C25 25 0 28E-12 C26 26 0 28E-12 ** Q21 21 13 7 PI 2 Q22 22 14 4 NI 2 Q23 4 23 21 PI Q24 7 23 22 NI Q25 25 21 2 NI 7 Q26 26 22 2 PI 7 ** Q27 25 25 7 PIJ Q28 26 26 4 NIJ Q29 8 25 7 PIJ Q30 8 26 4 NIJ ** .ENDS MDT * Biasing Circuit MBC * .SUBCKT MBC 1 4 7 13 14 ** R122 122 4 50E3 R123 122 1 100 ** Q121 13 13 7 PI Q122 13 14 122 NI 9 Q123 14 13 7 PI Q124 14 14 4 NI ** .ENDS MBC .MODEL NI NPN .MODEL PI PNP .MODEL NIJ NPN (VAF=100) .MODEL PIJ PNP (VAF=100)