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LPC660 Product Folder

Low Power CMOS Quad Operational Amplifier

Generic P/N 660

Parametric Table

Temperature Min (deg C)	-40
Temperature Max (deg C)	85
Channels (Channels)	4
Input OutputType	Vcm to V-, R-R Out
Gain Bandwidth (MHz)	.35
Slew Rate (Volts/usec)	.11
SupplyCurrent Per Channel (mA)	.04
Supply Min (Volt)	5

Supply Max (Volt)	15
Offset Voltage (mV)	3, 6
Max Input Bias Current (nA)	.0040
Output Current (mA)	21
Voltage Noise (nV/Hz)	42
Shut down	No
Special Features	Undefined

Datasheet

Title	Size in Kbytes	Date	View Online	Download	Receive via Email
LPC660 Low Power CMOS Quad Operational Amplifier	625 Kbytes	7-Mar-01	View Online	Download	Receive via Email
LPC660 Low Power CMOS Quad Operational Amplifier (JAPANESE)	475 Kbytes

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Package Availability, Models, Samples & Pricing

Part Number

Package

Status

Models

Samples &
Electronic
Orders

Budgetary Pricing

Std
Pack
Size

Package
Marking

Type

Pins

MSL/Lead-Free Availability

Lead
Time

Qty

SPICE

IBIS

Qty

$US each

LPC660AIM

SOIC NARROW

Status

Full production

LPC660A.MOD

N/A

1K+

$1.44

rail
of
55

NSUZXYTT
LPC660AIM

5-7 weeks

10000

LPC660IM

SOIC NARROW

Status

Full production

N/A

1K+

$1.12

rail
of
55

NSUZXYTT
LPC660IM

5-7 weeks

10000

LPC660AIMX

SOIC NARROW

Status

Full production

LPC660A.MOD

N/A

1K+

$1.44

reel
of
2500

NSUZXYTT
LPC660AIM

5-7 weeks

10000

LPC660IMX

SOIC NARROW

Status

Full production

N/A

1K+

$1.12

reel
of
2500

NSUZXYTT
LPC660IM

5-7 weeks

10000

LPC660 MDC

Unpackaged Die

Full production

N/A

tray
of
N/A

N/A

Obsolete Parts

Obsolete Part	Alternate Part or Supplier	Source	Last Time Buy Date
LPC660AIN	LMC6044AIN	NATIONAL SEMICONDUCTOR	09/08/98
LPC660AMJ/883	LMC6464AMJ/883	NATIONAL SEMICONDUCTOR	03/09/99
LPC660IN	LMC6044IN	NATIONAL SEMICONDUCTOR	09/08/98

The LPC660 CMOS Quad operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltages from +5V to +15V and features rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input V_OS, drift, and broadband noise as well as voltage gain (into 100 k and 5 k) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 1 mW.

This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.

See the LPC662 datasheet for a Dual CMOS operational amplifier and LPC661 datasheet for a single CMOS operational amplifier with these same features.

Features

Rail-to-rail output swing
Micropower operation:	(1 mW)
Specified for 100 k and 5 k loads
High voltage gain:	120 dB
Low input offset voltage:	3 mV
Low offset voltage drift:	1.3 µV/°C
Ultra low input bias current:	2 fA
Input common-mode includes V^-
Operation range from +5V to +15V
Low distortion:	0.01% at 1 kHz
Slew rate:	0.11 V/µs
Full military temp. range available

Applications

High-impedance buffer
Precision current-to-voltage converter
Long-term integrator
High-impedance preamplifier
Active filter
Sample-and-Hold circuit
Peak detector

Reliability Metrics

Part Number	Process	Sample Size (EFR)	Device Hours	Long Term Failure Rates (FITS)	MTTF
LPC660 MDC	P2CMOS	33300	1250000	3	353423344
LPC660AIM	P2CMOS	33300	1250000	3	353423344
LPC660AIMX	P2CMOS	33300	1250000	3	353423344
LPC660IM	P2CMOS	33300	1250000	3	353423344
LPC660IMX	P2CMOS	33300	1250000	3	353423344

For more information on Reliablitity Metrics, please click here.

Design Tools

Title	Size in Kbytes	Date	View Online	Download	Receive via Email
Amplifiers Selection Guide software for Windows	7 Kbytes	28-Jul-2003	View

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Application Notes

Title	Size in Kbytes	Date	View Online	Download	Receive via Email
AN-856: Application Note 856 A SPICE Compatible Macromodel for CMOS Operational Amplifiers	121 Kbytes	1-Oct-02	View Online	Download	Receive via Email

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[Information as of 15-Jan-2004]

LPC660 Product Folder